|
SEMIX402GAL066HDS_10 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules | |||
|
◁ |
SEMiX402GAL066HDs
SEMiX® 2s
Trench IGBT Modules
SEMiX402GAL066HDs
Features
⢠Homogeneous Si
⢠Trench = Trenchgate technology
⢠VCE(sat) with positive temperature
coefficient
⢠UL recognised file no. E63532
Typical Applications*
⢠Matrix Converter
⢠Resonant Inverter
⢠Current Source Inverter
Remarks
⢠Case temperature limited to TC=125°C
max.
⢠Product reliability results are valid for
Tj=150°C
⢠For short circuit: Soft RGoff
recommended
⢠Take care of over-voltage caused by
stray inductance
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Conditions
VCC = 300 V
IC = 400 A
RG on = 4.5 â¦
RG off = 4.5 â¦
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Eoff
Tj = 150 °C
Rth(j-c)
per IGBT
Inverse diode
VF = VEC
IF = 400 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
Tj = 25 °C
Tj = 150 °C
rF
Tj = 25 °C
Tj = 150 °C
IRRM
Qrr
Err
IF = 400 A
Tj = 150 °C
di/dtoff = 3700 A/µs
VGE = -8 V
Tj = 150 °C
VCC = 300 V
Tj = 150 °C
Rth(j-c)
per diode
Freewheeling diode
VF = VEC
IF = 400 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
Tj = 25 °C
Tj = 150 °C
rF
Tj = 25 °C
Tj = 150 °C
IRRM
Qrr
Err
IF = 400 A
Tj = 150 °C
di/dtoff = 3700 A/µs
VGE = -8 V
Tj = 150 °C
VCC = 300 V
Tj = 150 °C
Rth(j-c)
per diode
Module
LCE
RCC'+EE'
Rth(c-s)
Ms
Mt
res., terminal-chip TC = 25 °C
TC = 125 °C
per module
to heat sink (M5)
to terminals (M6)
w
Temperatur Sensor
R100
B100/125
Tc=100°C (R25=5 kâ¦)
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
min.
typ.
max. Unit
150
ns
125
ns
22
mJ
900
ns
65
ns
24
mJ
0.12 K/W
1.4
1.60
V
1.4
1.6
V
0.9
1
1.1
V
0.75
0.85
0.95
V
0.8
1.0
1.3
mâ¦
1.1
1.4
1.6
mâ¦
250
A
47
µC
10
mJ
0.15 K/W
1.3
1.5
V
1.3
1.5
V
0.9
1
1.1
V
0.75
0.85
0.95
V
0.7
0.9
1.1
mâ¦
1.0
1.2
1.4
mâ¦
250
A
47
µC
10
mJ
0.15 K/W
18
nH
0.7
mâ¦
1
mâ¦
0.045
K/W
3
5
Nm
2.5
5
Nm
Nm
250
g
493 ± 5%
â¦
3550
±2%
K
GAL
2
Rev. 0 â 16.04.2010
© by SEMIKRON
|
▷ |