SEMIX353GD176HDC_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 353GD176HDc
SEMiX^® 33c
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
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C_
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Module
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min.
typ.
(-++
(-+
(-(
)-@
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*-0
*3)
31
4+
max. Units
(-0+

(-0

(-1

(-(

A
A
2
:
D
)-(1 FGH
SEMiX 353GD176HDc
Preliminary Data
Features
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Typical Applications
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$_K?K
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_  (*+ ,
$_>
  &
"
    L "+
"_
    "=

Temperature sensor
$₍₎₎
E_())G(*+
_()), $_*++ LA
$$₍₎₎ #OE_())G(*+(G>(G₍₎₎P7
OFP7 E
*)

)-0
A
(
A
)-)(4
FGH
1
+
M
*-+
+
M
@))

)-4@16+N
LA
1++)6*N
F
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Remarks
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      & '
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GD
2
17-04-2007 SCH
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