SEMIX353GD126HDC_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 353GD126HDc
SEMiX^®33c
Trench IGBT Modules
SEMiX 353GD126HDc
Preliminary Data
Features
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Typical Applications
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Remarks
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Characteristics
Symbol Conditions
Inverse Diode
_>  _
1_{> }  (() ": _8  0 
_.  () *_{ ,}
_.  '() *_{ ,}
_>0
_.  () *
_.  '() *
_>
_.  () *
_.  '() *
1₅₅₆
E_
_
1_{> }  (() "
#I#  )300 "I=
_.  '() *
_8  @') : _  300 
5_.@J
Module
  ##
K_
5_LAL
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_  '() *
5_@
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Temperature sensor
5_'00
G_'00I'()
_'00* 5₍₎) MC
55_'00 +PG_'00I'()'I@'I_'00Q:
PHQ: G
min. typ.
'-3
'-3
'
0-4
(-?
2-3
220
3B
(B
(0
0-?
'
0-0'7
2
(-)
0-7B29)O
2))09(O
max.
'-4
'-4
'-'
0-B
2-'
7
0-'?
)
)
B00
Units




C
C
"
=
F
HI&

C
C
HI&
N
N

MC
H
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GD
2
19-04-2007 SCH
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