SEMIX353GB176HD_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 353GB176HD
SEMiX^® 3
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
_>  _
_>(
_>
1₄₄₅
F_
_
1_{> }  ))+ ": _8  ( 
1_{> }  ))+ "
#J#  7((( "J=
_.  )+ ,_{ ?}
_.  ')+ ,_{ ?}
_.  )+ ,
_.  ')+ ,
_.  )+ ,
_.  ')+ ,
_.  ')+ ,
_8  A'+ : _  ')(( 
4_.AL
Module
  ##
min.
typ.
'-++
'-+
'-'
(-C
)
)-0
)3(
32
7+
max. Units
'-0+

'-0

'-2

'-'

D
D
"
=
G
(-'2 IJK
SEMiX 353GB176HD
Preliminary Data
Features
 ^{  }
 ^{       }
 ^ ^{    }
  
 ^{   !}
Typical Applications
M_
4_NBN
 ?-   A
_  )+ ,
_  ')+ ,
4_A
  #
5
    O 5+
5_
    5@

Temperature sensor
4_'((
H_'((J')+
_'((, 4₎₊+ OD
44_'(( 6QH_'((J')+'JA'J_'((R:
QIR: H
)(

(-0
D
'
D
(-(7
IJK
2
+
*
)-+
+
*
2((

(-7C29+P
OD
2++(9)P
I
 ^{"     #} 
 ^$%
 ^{    # }
Remarks
 ^{  !    # &}
_'(((    
      # &
_')((
 ^{*   # }
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
17-04-2007 SCH
© by SEMIKRON