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SEMIX353GB176HDS_11 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX353GB176HDs
SEMiX® 3s
Trench IGBT Modules
SEMiX353GB176HDs
Features
⢠Homogeneous Si
⢠Trench = Trenchgate technology
⢠VCE(sat) with positive temperature
coefficient
⢠UL recognised file no. E63532
Typical Applications*
⢠AC inverter drives
⢠UPS
⢠Electronic welders
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 225 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 125 °C
VF0
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 225 A
Tj = 125 °C
di/dtoff = 4000 A/µs
VGE = -15 V
VCC = 1200 V
Tj = 125 °C
Tj = 125 °C
per diode
Module
LCE
RCC'+EE'
res., terminal-chip
TC = 25 °C
TC = 125 °C
Rth(c-s)
Ms
Mt
per module
to heat sink (M5)
to terminals (M6)
min.
0.9
0.7
2.0
2.7
3
2.5
typ.
1.6
1.5
1.1
0.9
2.0
2.7
280
83
45
20
0.7
1
0.04
max.
1.75
1.7
1.3
1.1
2.0
2.7
0.13
5
5
w
Temperatur Sensor
R100
Tc=100°C (R25=5 kï)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
300
493 ± 5%
3550
±2%
Unit
V
V
V
V
mï
mï
A
µC
mJ
K/W
nH
mï
mï
K/W
Nm
Nm
Nm
g
ï
K
GB
2
Rev. 2 â 23.03.2011
© by SEMIKRON
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