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SEMIX353GB176HDS_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX 353GB176HDs
SEMiX® 3s
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
=
=(
=
0334
E
0=
))* "9 7 (
0=
))* "
#I# 6((( "I<
- )* + >
- ')* + >
- )* +
- ')* +
- )* +
- ')* +
- ')* +
7 @'* 9 ')((
3-@K
Module
##
min.
typ.
',**
',*
','
(,B
)
),/
)2(
21
6*
max. Units
',/*
',/
',1
','
C
C
"
<
F
(,'1 HIJ
SEMiX 353GB176HDs
Preliminary Data
Features
!
Typical Applications
L
3MAM
>,
@
)* +
')* +
3@
#
4
N 4*
4
4?
Temperature sensor
3'((
G'((I')*
'((+ 3)** NC
33'(( 5QG'((I')*'I@'I'((R9
QHR9 G
)(
(,/
C
'
C
(,(6
HIJ
1
*
O
),*
*
O
1((
(,6B18*P
NC
1**(8)P
H
"
#
$%
#
Remarks
! # &
'(((
# &
')((
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
18-04-2007 SCH
© by SEMIKRON
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