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SEMIX353GB176HDS_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules
SEMiX 353GB176HDs
SEMiX® 3s
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
=  
=(
=
0334
E

0=   ))* "9 7  ( 
0=   ))* "
#I#  6((( "I<
-  )* + >
-  ')* + >
-  )* +
-  ')* +
-  )* +
-  ')* +
-  ')* +
7  @'* 9   ')(( 
3-@K
Module
  ##
min.
typ.
',**
',*
','
(,B
)
),/
)2(
21
6*
max. Units
',/*

',/

',1

','

C
C
"
<
F
(,'1 HIJ
SEMiX 353GB176HDs
Preliminary Data
Features
   
        
         
  
     !
Typical Applications
L
3MAM
 >,   @
  )* +
  ')* +
3@ 
  # 
4
    N 4*
4
    4?

Temperature sensor
3'((
G'((I')*
'((+ 3)** NC
33'(( 5QG'((I')*'I@'I'((R9
QHR9 G
)(

(,/
C
'
C
(,(6
HIJ
1
*
O
),*
*
O
1((

(,6B18*P
NC
1**(8)P
H
 "     #
 $%
     # 
Remarks
    !    # &
'(((    
      # &
')((
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
18-04-2007 SCH
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