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SEMIX352GB128D_07 Datasheet, PDF (2/5 Pages) Semikron International – SPT IGBT Modules | |||
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SEMiX 352GB128D
SEMiX® 2
SPT IGBT Modules
SEMiX 352GB128D
Preliminary Data
Features
!" !
!#
Typical Applications
$
" %"
&
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Remarks
+
%
Characteristics
Symbol Conditions
Inverse Diode
A
2A
'(( $= : (
/ ', -! "C
/ 1', -! "C
A(
/ ', -
/ 1', -
A
/ ', -
/ 1', -
2667
F
2A
'', $
%J% ,3,( $J@
/ 1', -
: 1, = <((
6/L
Module
! %%
M
6NDN
C.
!
', -
1', -
6
7
! %
) 7,
7
7<
Temperature sensor
61((
H1((J1',
1((- 6',, )E
661(( 8!PH1((J1',1J1J1((Q=
PIQ= H
min. typ.
'
1.5
1.1
(.5,
9.,
9.5
'9(
31
11
15
(.4
1
(.(9,
3
'.,
(.9B3;,O
3,,(;'O
max.
'.,
'.3
1.9,
1.'
,.3
,.,
(.1,
,
,
',(
Units
E
E
$
@
G
IJK
E
E
IJK
+
+
)E
I
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
20-04-2007 SCH
© by SEMIKRON
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