SEMIX352GB128DS_08 Datasheet, PDF (2/5 Pages) Semikron International – SPT IGBT Modules

SEMiX352GB128Ds
SEMiX^®2s
SPT IGBT Modules
SEMiX352GB128Ds
Preliminary Data
Features
• Homogeneous Si
• SPT = Soft-Punch-Through technology
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 200 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 125 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
I_F = 200 A
T_j = 125 °C
di/dt_off = 5350 A/µs
V_GE = -15 V
T_j = 125 °C
V_CC = 600 V
T_j = 125 °C
per diode
Module
L_CE
R_CC'+EE'
res., terminal-chip ^{TC = 25 °C}
T_C = 125 °C
R_th(c-s)
M_s
M_t
w
per module
to heat sink (M5)
to terminals (M6)
Temperature sensor
R₁₀₀
T_c=100°C (R₂₅=5 kΩ)
B_100/125
R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)];
T[K];
min.
typ.
max. Unit
2.0
2.5
V
1.8
2.3
V
0.75
1.1
1.45
V
0.5
0.85
1.2
V
3.8
4.5
5.3
mΩ
4.0
4.8
5.5
mΩ
240
A
31
µC
11
mJ
0.15 K/W
18
nH
0.7
mΩ
1
mΩ
0.045
K/W
3
5
Nm
2.5
5
Nm
250
g
0,493
±5%
kΩ
3550
±2%
K
GB
2
Rev. 12 – 02.12.2008
© by SEMIKRON