SEMIX352GB128DS_07 Datasheet, PDF (2/5 Pages) Semikron International – SPT IGBT Modules

SEMiX 352GB128Ds
SEMiX^® 2s
SPT IGBT Modules
SEMiX 352GB128Ds
SEMiX 352GAL128Ds
SEMiX 352GAR128Ds
Preliminary Data
Features
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Typical Applications
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Characteristics
Symbol Conditions
Inverse Diode
_@  _
1_{@ }  '(( $< ₉  ( 
_.  '+ ,_{! "B}
_.  0'+ ,_{! "B}
_@(
_.  '+ ,
_.  0'+ ,
_@
_.  '+ ,
_.  0'+ ,
1₅₅₆
E_

1_{@ }  '(( $
%I%  +2+( $I?
_.  0'+ ,
₉  0+ < _  ;(( 
5_.K
Module
!  %%
L_
5_MCM
 B-   !
_  '+ ,
_  0'+ ,
5_
6
!  %
    ) 6+
6_
    6;
Temperature sensor
5₀₍₍
G_0((I0'+
_0((, 5_'++ )D
55₀₍₍ 7!PG_0((I0'+0I0I₀₍₍Q<
PHQ< G
min. typ.
'
0-4
0-0
(-4+
8-+
8-4
'8(
20
00
04
(-3
0
(-(8+
2
'-+
(-8A2:+O
2++(:'O
max.
'-+
'-2
0-8+
0-'
+-2
+-+
(-0+
+
+
'+(
Units




D
D
$
?
F
HIJ

D
D
HIJ
N
N

)D
H
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
GAR
2
20-04-2007 SCH
© by SEMIKRON