SEMIX352GAR128DS Datasheet, PDF (2/5 Pages) Semikron International – SPT IGBT Modules

SEMiX352GAR128Ds
SEMiX^®2s
SPT IGBT Modules
SEMiX352GAR128Ds
Preliminary Data
Features
• Homogeneous Si
• SPT = Soft-Punch-Through technology
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
Characteristics
Symbol Conditions
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-c)
R_th(j-s)
V_CC = 600 V
I_C = 200 A
T_j = 125 °C
R_{G on} = 3 Ω
R_{G off} = 3 Ω
per IGBT
per IGBT
Inverse diode
V_F = V_EC
I_F = 200 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 125 °C
V_F0
T_j = 25 °C
T_j = 125 °C
r_F
T_j = 25 °C
T_j = 125 °C
I_RRM
Q_rr
E_rr
I_F = 200 A
T_j = 125 °C
di/dt_off = 5350 A/µs
V_GE = -15 V
T_j = 125 °C
V_CC = 600 V
T_j = 125 °C
R_th(j-c)
per diode
R_th(j-s)
per diode
Freewheeling diode
V_F = V_EC
I_F = 200 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 125 °C
V_F0
T_j = 25 °C
T_j = 125 °C
r_F
T_j = 25 °C
T_j = 125 °C
I_RRM
Q_rr
E_rr
I_F = 200 A
T_j = 125 °C
di/dt_off = 5320 A/µs
V_GE = -15 V
T_j = 125 °C
V_CC = 600 V
T_j = 125 °C
R_th(j-c)
per diode
R_th(j-s)
per diode
Module
L_CE
R_CC'+EE'
R_th(c-s)
M_s
M_t
res., terminal-chip ^{TC = 25 °C}
T_C = 125 °C
per module
to heat sink (M5)
to terminals (M6)
w
Temperature sensor
R₁₀₀
T_c=100°C (R₂₅=5 kΩ)
B_100/125
R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)];
T[K];
min.
0.75
0.5
3.8
4.0
0.75
0.5
3.8
4.0
3
2.5
typ.
230
55
20
585
90
21
2.0
1.8
1.1
0.85
4.5
4.8
240
31
11
2.0
1.8
1.1
0.85
4.5
4.8
240
31
11
18
0.7
1
0.045
0,493
±5%
3550
±2%
max.
0.083
Unit
ns
ns
mJ
ns
ns
mJ
K/W
K/W
2.5
V
2.3
V
1.45
V
1.2
V
5.3
mΩ
5.5
mΩ
A
µC
mJ
0.15 K/W
K/W
2.5
V
2.3
V
1.45
V
1.2
V
5.3
mΩ
5.5
mΩ
A
µC
mJ
0.15 K/W
K/W
nH
mΩ
mΩ
K/W
5
Nm
5
Nm
Nm
250
g
kΩ
K
GAR
2
Rev. 8 – 02.12.2008
© by SEMIKRON