SEMIX303GB12T4S Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 303GB12T4s
SEMiX^®3s
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
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_@.
_@
1₇₇₈
E_
_
1_{@ }  6.. "< _:  . 
1_{@ }  6.. "
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Module
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min.
typ.
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6
3
((/)
max. Units
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6/6
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C
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SEMiX 303GB12T4s
Target Data
Features
 ^{  }
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 ^ ^{    }
  
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Typical Applications
L_
7_MBM
 ,/   A
_  () *
_  '() *
7_A
  #
8
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8_
    84

Temperature sensor
7_'..
H_'..J'()
_'..* 7₍₎) NC
77_'.. +QH_'..J'()'JA'J_'..R<
QIR
(.

./2
C
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C
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IJ&
6
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O
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)
O
6..

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NC
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I
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Remarks
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_'()* +,
 ^{%#  !    #}
 _-').*
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
16-07-2007 SCH
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