SEMIX302GB176HD_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 302GB176HD
SEMiX^® 2
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
_>  _
_>(
_>
1₄₄₅
F_
_
1_{> }  )(( ": _8  ( 
1_{> }  )(( "
#J#  2'(( "J=
_.  )+ ,_{ @}
_.  ')+ ,_{ @}
_.  )+ ,
_.  ')+ ,
_.  )+ ,
_.  ')+ ,
_.  ')+ ,
_8  A'+ : _  ')(( 
4_.AL
Module
  ##
min.
typ.
'-+
'-7+
'-'
(-C
)
)-0
)2+
00
72
max. Units
'-0

'-?+

'-2

'-'

D
D
"
=
G
(-'+ IJK
SEMiX 302GB176HD
Preliminary Data
Features
 ^{  }
 ^{       }
 ^ ^{    }
  
 ^{   !}
Typical Applications
M_
4_NBN
 @-   A
_  )+ ,
_  ')+ ,
4_A
  #
5
    O 5+
5_
    5?

Temperature sensor
4_'((
H_'((J')+
_)+, 4₎₊+ OD
44_'(( 6QH_'((J')+'JA'J_'((R:
QIR: H
'3

(-0
D
'
D
(-(7+
IJK
2
+
*
)-+
+
*
)+(

(-7C29+P
OD
2++(9)P
I
 ^{"     #} 
 ^$%
 ^{    # }
Remarks
 ^{  !    # &}
_'(((    
      # &
_')((
 ^{*   # }
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
18-04-2007 SCH
© by SEMIKRON