SEMIX302GB176HDS_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 302GB176HDs
SEMiX^® 2s
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
₌  _
₌₍
₌
0₃₃₄
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_
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0_{= }  )(( "
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3_-@K
Module
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min.
typ.
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(,B
)
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)1*
//
61
max. Units
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C
C
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SEMiX 302GB176HDs
Preliminary Data
Features
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Typical Applications
L_
3_MAM
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3_@
  #
4
    N 4*
4_
    4>

Temperature sensor
3_'((
_)*+ 3_)** NC
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G_'((I')*
33_'(( 5QG_'((I')*'I@'I_'((R9
QHR9 G
'2

(,/
C
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C
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HIJ
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(,6B1
NC
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Remarks
 ^{  !    # &}
_'(((    
      # &
_')(
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
18-04-2007 SCH
© by SEMIKRON