SEMIX302GB066HD_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 302GB066HD
SEMiX^®2
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
_>  _
$_{> }  6.. 8: _/  . 
_>.
_>
$_##!
D_
_
#_-2J
Module
$_{> }  6.. 8
%H%  64.. 8H=
_/  27 : _  6.. 
  %%
_-  '( )_{ *}
_-  &(. )_{ *}
_-  '( )
_-  &(. )
_-  '( )
_-  &(. )
_-  &(. )
min.
typ.
&3?
&3?
&
.37(
&36
&37
'?.
6(
53(
max. Units
&34

&34

&3&

.3A(

&35
B
'3'
B
8
=
E
.3&A GHI
SEMiX 302GB066HD
Preliminary Data
Features
 ^{  }
 ^{       }
 ^ ^{    }
  
Typical Applications
K_
#_L@L
 *3   2
_  '( )
_  &'( )
#_2
  %
!
    1 !(
!_
    !4

Temperature sensor
#_&..
F_&..H&'(
_&..) #_'(( 1B
##_&.. "OF_&..H&'(&H2&H_&..P:
OGP: F
&7

.35
B
&
B
.3.?(
GHI
6
(
M
'3(
(
M
'(.

.3?A69(N
1B
6((.9'N
G
 ^{!"    }
 ^{#    $   }
 ^{   $   }
Remarks
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_&'() "*
 ^{+%  ,    %}
 _-&(.)
 ^{   #/  }
1    2  %
,   % 
 ^{   % }
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
16-04-2007 SCH
© by SEMIKRON