SEMIX302GB066HDS_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 302GB066HDs
SEMiX^®2s
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
_>  _
$_{> }  6.. 8: _/  . 
_>.
_>
$_##!
D_
_
#_-1J
Module
$_{> }  6.. 8
%H%  64.. 8H=
_/  17 : _  6.. 
  %%
_-  '( )_{ *}
_-  &(. )_{ *}
_-  '( )
_-  &(. )
_-  '( )
_-  &(. )
_-  &(. )
min.
typ.
&2?
&2?
&
.27(
&26
&27
'?.
6(
52(
max. Units
&24

&24

&2&

.2A(

&25
B
'2'
B
8
=
E
.2&A GHI
SEMiX 302GB066HDs
Preliminary Data
Features
 ^{  }
 ^{       }
 ^ ^{    }
  
Typical Applications
K_
#_L@L
 *2   1
_  '( )
_  &'( )
#_1
  %
!
    0 !(
!_
    !4

Temperature sensor
#_&..
F_&..H&'(
_&..) #_'(( 0B
##_&.. "OF_&..H&'(&H1&H_&..P:
OGP: F
&7

.25
B
&
B
.2.?(
GHI
6
(
M
'2(
(
M
'(.

.2?A69(N
0B
6((.9'N
G
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Remarks
 ^{     % }
_&'() "*
 ^{+%  ,    %}
 _-&(.)
 ^{   #/  }
 ^{0    1  %}
,   % 
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
16-04-2007 SCH
© by SEMIKRON