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SEMIX302GAL12E4S_10 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules
SEMiX302GAL12E4s
SEMiX® 2s
Trench IGBT Modules
SEMiX302GAL12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 0,5 Ω
RGoff,main = 0,5 Ω
RG,X = 2,2 Ω
RE,X = 0,5 Ω
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Eoff
Conditions
VCC = 600 V
IC = 300 A
Tj = 150 °C
Tj = 150 °C
RG on = 1.9 Ω
Tj = 150 °C
RG off = 1.9 Ω
Tj = 150 °C
di/dton = 5000 A/µs Tj = 150 °C
di/dtoff = 2800 A/µs Tj = 150 °C
Rth(j-c)
per IGBT
Inverse diode
VF = VEC
IF = 300 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
Tj = 25 °C
Tj = 150 °C
rF
Tj = 25 °C
Tj = 150 °C
IRRM
Qrr
Err
IF = 300 A
Tj = 150 °C
di/dtoff = 4300 A/µs
VGE = -15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
Rth(j-c)
per diode
Freewheeling diode
VF = VEC
IF = 300 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
Tj = 25 °C
Tj = 150 °C
rF
Tj = 25 °C
Tj = 150 °C
IRRM
Qrr
Err
IF = 300 A
Tj = 150 °C
di/dtoff = 4300 A/µs
VGE = -15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
Rth(j-c)
per diode
Module
LCE
RCC'+EE'
Rth(c-s)
Ms
Mt
res., terminal-chip TC = 25 °C
TC = 125 °C
per module
to heat sink (M5)
to terminals (M6)
w
Temperatur Sensor
R100
B100/125
Tc=100°C (R25=5 kΩ)
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
min.
typ.
max. Unit
282
ns
60
ns
30
mJ
564
ns
117
ns
44
mJ
0.096 K/W
2.1
2.46
V
2.1
2.4
V
1.1
1.3
1.5
V
0.7
0.9
1.1
V
2.2
2.8
3.2
mΩ
3.3
3.9
4.3
mΩ
230
A
50
µC
19
mJ
0.17 K/W
2.1
2.5
V
2.1
2.4
V
1.1
1.3
1.5
V
0.7
0.9
1.1
V
2.2
2.8
3.2
mΩ
3.3
3.9
4.3
mΩ
230
A
50
µC
19
mJ
0.17 K/W
18
nH
0.7
mΩ
1
mΩ
0.045
K/W
3
5
Nm
2.5
5
Nm
Nm
250
g
493 ± 5%
Ω
3550
±2%
K
GAL
2
Rev. 0 – 05.05.2010
© by SEMIKRON