SEMIX252GB126HD_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 252GB126HD
SEMiX^®2
Trench IGBT Modules
SEMiX 252GB126HD
Preliminary Data
Features
 ^{  }
 ^{       }
 ^ ^{    }
  
 ^{   !}
Typical Applications
 ^{"     #} 
 ^$%
 ^{   & # }
Remarks
 ^{     # }
_'()* +,
 ^{-   # }
Characteristics
Symbol Conditions
Inverse Diode
_@  _
2_{@ }  ')1 "< _9  1 
_/  () *_{ ,}
_/  '() *_{ ,}
_@1
_/  () *
_/  '() *
_@
_/  () *
_/  '() *
2₆₆₇
F_
_
2_{@ }  ')1 "
#J#  3;11 "J?
_/  '() *
_9  A') < _  ;11 
6_/AK
Module
  ##
L_
6_MBM
 ,.   A
_  () *
_  '() *
6_A
7
  #
    N 7)
7_
    7;

Temperature sensor
6_'11
H_'11J'()
_'11* 6₍₎) ND
66_'11 +PH_'11J'()'JA'J_'11Q<
PIQ< H
min. typ.
'.;
'.;
'
1.4
3
).8
(;1
38
'4
'4
1.5
'
1.13)
8
(.)
1.3C8:)O
8))1:(O
max.
'.4
'.4
'.'
1.C
3.5
;
1.(3
)
)
()1
Units




D
D
"
?
G
IJ&

D
D
IJ&
-
-

ND
I
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
18-04-2007 SCH
© by SEMIKRON