SEMIX252GB126HDS_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 252GB126HDs
SEMiX^®2s
Trench IGBT Modules
SEMiX 252GB126HDs
Preliminary Data
Features
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Typical Applications
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Remarks
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_'()* +,
Characteristics
Symbol Conditions
Inverse Diode
_?  _
1_{? }  ')0 "; _8  0 
_.  () *_{ ,}
_.  '() *_{ ,}
_?0
_.  () *
_.  '() *
_?
_.  () *
_.  '() *
1₅₅₆
E_
_
1_{? }  ')0 "
#I#  2:00 "I>
_.  '() *
_8  @') ; _  :00 
5_.@J
  ##
Freewheeling Diode
_?  _
1_{? }  "; _8  
_.  *_{ ,}
_?0
_?
1₅₅₆
E_
_
1_{? }  "
_.  *
_.  *
_.  *
_8  0 ; _  700 
  ##
Module
K_
5_LAL
 ,-   @
_  () *
_  '() *
5_@
6
  #
    M 6)
6_
    6:

Temperature sensor
5_'00
G_'00I'()
_'00* 5₍₎) MC
55_'00 +PG_'00I'()'I@'I_'00Q;
PHQ; G
min. typ.
'-:
'-:
'
0-3
2
)-7
(:0
27
'3
'3
0-4
'
0-02)
7
(-)
0-2B79)O
7))09(O
max.
'-3
'-3
'-'
0-B
2-4
:
0-(2
)
)
()0
Units




C
C
"
>
F
HI&



"
>
F
HI&

C
C
HI&
N
N

MC
H
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
18-04-2007 SCH
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