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SEMIX202GB12E4S_10 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX202GB12E4s
SEMiX® 2s
Trench IGBT Modules
SEMiX202GB12E4s
Features
⢠Homogeneous Si
⢠Trench = Trenchgate technology
⢠VCE(sat) with positive temperature
coefficient
⢠High short circuit capability
⢠UL recognized, file no. E63532
Typical Applications*
⢠AC inverter drives
⢠UPS
⢠Electronic Welding
Remarks
⢠Case temperature limited to TC=125°C
max.
⢠Product reliability results are valid for
Tj=150°C
⢠Dynamic values apply to the
following combination of resistors:
RGon,main = 1,0 â¦
RGoff,main = 1,0 â¦
RG,X = 2,2 â¦
RE,X = 0,5 â¦
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 200 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
IF = 200 A
Tj = 150 °C
di/dtoff = 3400 A/µs
VGE = -15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per diode
Module
LCE
RCC'+EE'
res., terminal-chip TC = 25 °C
TC = 125 °C
Rth(c-s)
Ms
Mt
per module
to heat sink (M5)
to terminals (M6)
w
Temperatur Sensor
R100
B100/125
Tc=100°C (R25=5 kâ¦)
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
min.
typ.
max. Unit
2.2
2.52
V
2.1
2.5
V
1.1
1.3
1.5
V
0.7
0.9
1.1
V
4.0
4.5
5.1
mâ¦
5.3
6.3
6.8
mâ¦
160
A
31.5
µC
12
mJ
0.26 K/W
18
nH
0.7
mâ¦
1
mâ¦
0.045
K/W
3
5
Nm
2.5
5
Nm
Nm
250
g
493 ± 5%
â¦
3550
±2%
K
GB
2
Rev. 0 â 05.05.2010
© by SEMIKRON
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