SEMIX202GB066HD_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 202GB066HD
SEMiX^®2
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
_?  _
$_{? }  '.. 6; _/  . 
_?.
_?
$_##!
D_
_
#_-2J
Module
$_{? }  '.. 6
%H%  :@.. 6H>
_/  27 ; _  :.. 
  %%
_-  '( )_{ *}
_-  &(. )_{ *}
_-  '( )
_-  &(. )
_-  '( )
_-  &(. )
_-  &(. )
min.
typ.
&38
&38
&
.37(
'
'35(
'.(
'7
43(
max. Units
&34

&34

&3&

.3@(

'3(
B
:3'( B
6
>
E
.3'5 GHI
SEMiX 202GB066HD
Preliminary Data
Features
 ^{  }
 ^{       }
 ^ ^{    }
  
Typical Applications
K_
#_LAL
 *3   2
_  '( )
_  &'( )
#_2
  %
!
    1 !(
!_
    !4

Temperature sensor
#_&..
F_&..H&'(
_&..) #_'(( 1B
##_&.. "OF_&..H&'(&H2&H_&..P;
OGP; F
&7

.35
B
&
B
.3.8(
GHI
:
(
M
'3(
(
M
'(.

.38@:9(N
1B
:((.9'N
G
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Remarks
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_&'() "*
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1    2  %
,   % 
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
16-04-2007 SCH
© by SEMIKRON