SEMIX151GD126HDS_08 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX151GD126HDs
SEMiX^®13
Trench IGBT Modules
SEMiX151GD126HDs
Preliminary Data
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to T_C=125°C
max.
• Not for new design
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 100 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 125 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
R_th(j-s)
T_j = 25 °C
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
I_F = 100 A
T_j = 125 °C
di/dt_off = 2900 A/µs
V_GE = -15 V
T_j = 125 °C
V_CC = 600 V
T_j = 125 °C
per diode
per diode
Module
L_CE
R_CC'+EE'
R_th(c-s)
M_s
M_t
res., terminal-chip ^{TC = 25 °C}
T_C = 125 °C
per module
to heat sink (M5)
to terminals (M6)
w
Temperature sensor
R₁₀₀
B_100/125
T_c=100°C (R₂₅=5 kΩ)
R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)];
T[K];
min.
0.9
0.7
5.0
7.0
3
2.5
typ.
1.6
1.6
1
0.8
6.0
8.0
125
26
11.5
20
0.7
1
0.04
0,493
±5%
3550
±2%
max. Unit
1.8
V
1.8
V
1.1
V
0.9
V
7.0
mΩ
9.0
mΩ
A
µC
mJ
0.36 K/W
K/W
nH
mΩ
mΩ
K/W
5
Nm
5
Nm
Nm
350
g
kΩ
K
GD
2
Rev. 13 – 03.12.2008
© by SEMIKRON