SEMIX151GD126HDS_07 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX 151GD126HDs
SEMiX^®13s
Trench IGBT Modules
SEMiX 151GD126HDs
Preliminary Data
Features
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Typical Applications
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Remarks
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Characteristics
Symbol Conditions
Inverse Diode
₌  _
1_{= }  '00 "9 _6  0 
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_.  '() *_{ ,}
₌₀
_.  () *
_.  '() *
₌
_.  () *
_.  '() *
1₄₄₅
E_
_
1_{= }  '00 "
#I#  (B00 "I<
_.  '() *
_6  >') 9 _  800 
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Module
  ##
K_
4_L@L
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Temperature sensor
4_'00
G_'00I'()
_'00* 4₍₎) MC
44_'00 +PG_'00I'()'I>'I_'00Q9
PHQ
min. typ.
'-8
'-8
'
0-3
8
3
'()
(8
''-)
(0
0-2
'
0-0?
A
(-)
0-?BA7)O
A))07(O
max.
'-3
'-3
'-'
0-B
2
B
0-A8
)
)
A)0
Units




C
C
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<
F
HI&

C
C
HI&
N
N

MC
H
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GD
2
18-04-2007 SCH
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