SEMIX151GB12VS Datasheet, PDF (2/5 Pages) Semikron International – positive temperature coefficient

SEMiX151GB12Vs
SEMiX^® 1s
SEMiX151GB12Vs
Features
• Homogeneous Si
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T_C=125°C
max.
• Product reliability results are valid for
T_j=150°C
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 150 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
I_F = 150 A
T_j = 150 °C
di/dt_off = 4400 A/µs
V_GE = -15 V
V_CC = 600 V
T_j = 150 °C
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
res., terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
M_s
M_t
per module
to heat sink (M5)
to terminals (M6)
min.
1.1
0.7
4.3
7.0
3
2.5
typ.
2.14
2.07
1.3
0.9
5.6
7.8
175
27.5
11.5
16
0.7
1
0.075
max.
2.46
2.38
1.5
1.1
6.4
8.5
0.31
5
5
w
Temperatur Sensor
R₁₀₀
T_c=100°C (R₂₅=5 k)
B_100/125
R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)]; T[K];
145
493 ± 5%
3550
±2%
Unit
V
V
V
V
m
m
A
µC
mJ
K/W
nH
m
m
K/W
Nm
Nm
Nm
g

K
GB
2
Rev. 2 – 16.02.2011
© by SEMIKRON