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SEMIX151GB12T4S Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules
SEMiX 151GB12T4s
SEMiX®1s
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
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?.
?
1556
E

1?   '). "; 8  . 
1?   '). "
-  () * ,
-  '). * ,
-  () *
-  '). *
-  () *
-  '). *
-  '). *
8  A') ;   :.. 
5-AK
Module
  ##
min.
typ.
(/')
(/.)
'/3
./@
)/2
2/2
''/3
max. Units
(/7)

(/7

'/)

'/'

:/3
C
4/2
C
"
>
G
./3' IJ&
SEMiX 151GB12T4s
SEMiX 151GAL12T4s
SEMiX 151GAR12T4s
Target Data
Features
   
        
         
  
     !
Typical Applications
L
5MBM
 ,/   A
  () *
  '() *
5A 
  # 
6
    N 6)
6
    6:

Temperature sensor
5'..
H'..J'()
'..* 5()) NC
55'.. +QH'..J'()'JA'J'..R;
QIR
':

./2
C
'
C
./.2)
IJ&
3
)
O
(/)
)
O
').

./7@39)P
NC
3)).9(P
I
 "     #
 $%
    & # 
Remarks
       # 
'()* +,
 %#   !    #
 -').*
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
GAR
2
16-07-2007 SCH
© by SEMIKRON