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SEMIX151GB12T4S Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX 151GB12T4s
SEMiX®1s
Trench IGBT Modules
Characteristics
Symbol Conditions
Inverse Diode
?
?.
?
1556
E
1?
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1?
'). "
- () * ,
- '). * ,
- () *
- '). *
- () *
- '). *
- '). *
8 A') ; :..
5-AK
Module
##
min.
typ.
(/')
(/.)
'/3
./@
)/2
2/2
''/3
max. Units
(/7)
(/7
'/)
'/'
:/3
C
4/2
C
"
>
G
./3' IJ&
SEMiX 151GB12T4s
SEMiX 151GAL12T4s
SEMiX 151GAR12T4s
Target Data
Features
!
Typical Applications
L
5MBM
,/
A
() *
'() *
5A
#
6
N 6)
6
6:
Temperature sensor
5'..
H'..J'()
'..* 5()) NC
55'.. +QH'..J'()'JA'J'..R;
QIR
':
./2
C
'
C
./.2)
IJ&
3
)
O
(/)
)
O
').
./7@39)P
NC
3)).9(P
I
"
#
$%
& #
Remarks
#
'()* +,
%# ! #
-').*
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
GAR
2
16-07-2007 SCH
© by SEMIKRON
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