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SEMIX151GAR12E4S Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX151GAR12E4s
SEMiX®1s
Trench IGBT Modules
SEMiX151GAR12E4s
Features
⢠Homogeneous Si
⢠Trench = Trenchgate technology
⢠VCE(sat) with positive temperature
coefficient
⢠High short circuit capability
⢠UL recognised file no. E63532
Typical Applications
⢠AC inverter drives
⢠UPS
⢠Electronic Welding
Remarks
⢠Case temperature limited to TC=125°C
max.
⢠Product reliability results are valid for
Tj=150°C
Characteristics
Symbol Conditions
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
VCC = 600 V
IC = 150 A
Tj = 150 °C
Tj = 150 °C
RG on = 1 â¦
RG off = 1 â¦
Tj = 150 °C
Tj = 150 °C
di/dton = 3900 A/µs Tj = 150 °C
di/dtoff = 2000 A/µs Tj = 150 °C
per IGBT
Inverse diode
VF = VEC
IF = 150 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 3400 A/µs
VGE = -15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per diode
Freewheeling diode
VF = VEC
IF = 150 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 3400 A/µs
VGE = -15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per diode
Module
LCE
RCC'+EE'
res., terminal-chip TC = 25 °C
TC = 125 °C
Rth(c-s)
Ms
Mt
per module
to heat sink (M5)
to terminals (M6)
w
Temperatur Sensor
R100
Tc=100°C (R25=5 kâ¦)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
min.
typ.
max. Unit
204
ns
42
ns
16.6
mJ
468
ns
91
ns
18.4
mJ
0.19 K/W
2.1
2.46
V
2.1
2.4
V
1.1
1.3
1.5
V
0.7
0.9
1.1
V
4.3
5.6
6.4
mâ¦
6.7
7.8
8.5
mâ¦
115
A
23
µC
8.9
mJ
0.31 K/W
2.1
2.5
V
2.1
2.4
V
1.1
1.3
1.5
V
0.7
0.9
1.1
V
4.3
5.6
6.4
mâ¦
6.7
7.8
8.5
mâ¦
115
A
23
µC
8.9
mJ
0.31 K/W
16
nH
0.7
mâ¦
1
mâ¦
0.075
K/W
3
5
Nm
2.5
5
Nm
Nm
145
g
493 ± 5%
â¦
3550
±2%
K
GAR
2
Rev. 1 â 20.02.2009
© by SEMIKRON
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