SEMIX101GD12E4S Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX101GD12E4s
SEMiX^®13
Trench IGBT Modules
SEMiX101GD12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T_C=125°C
max.
• Product reliability results are valid for
T_j=150°C
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 100 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
I_F = 100 A
T_j = 150 °C
di/dt_off = 3000 A/µs
V_GE = -15 V
T_j = 150 °C
V_CC = 600 V
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
res., terminal-chip ^{TC = 25 °C}
T_C = 125 °C
R_th(c-s)
M_s
M_t
per module
to heat sink (M5)
to terminals (M6)
w
Temperatur Sensor
R₁₀₀
B_100/125
T_c=100°C (R₂₅=5 kΩ)
R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)];
T[K];
min.
typ.
max. Unit
2.2
2.52
V
2.1
2.5
V
1.1
1.3
1.5
V
0.7
0.9
1.1
V
8.0
9.0
10.2 mΩ
10.5
12.5
13.7 mΩ
95
A
16
µC
6.5
mJ
0.48 K/W
20
nH
0.7
mΩ
1
mΩ
0.04
K/W
3
5
Nm
2.5
5
Nm
Nm
350
g
493 ± 5%
Ω
3550
±2%
K
GD
2
Rev. 1 – 20.02.2009
© by SEMIKRON