24ACC12T4V10 Datasheet, PDF (2/9 Pages) List of Unclassifed Manufacturers – Robust and soft freewheeling diodes in CAL technology

SKiiP 24ACC12T4V10
MiniSKiiP^® 2
Twin 6-pack
SKiiP 24ACC12T4V10
Features
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Typical Applications*
• 4Q inverters
Remarks
• Max. case temperature limited to
T_C=125°C
• Product reliability results valid for
T_j≤150°C (recommended
T_j,op=-40...+150°C)
• Terminal distances sufficient for basic
insulation in 3-phase 480VAC TN
systems
• DC-link voltage V_DC≤800V
• Temperature sensor: no basic
insulation to main circuit, signal
processing with reference to –DC
potential
• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information
Characteristics
Symbol Conditions
IGBT 1 - 6
V_CE(sat)
I_C = 25 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_CE0
chiplevel
T_j = 25 °C
T_j = 150 °C
r_CE
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_GE(th)
V_GE = V_CE V, I_C = 1 mA
I_CES
V_GE = 0 V
T_j = 25 °C
V_CE = 1200 V
C_ies
C_oes
C_res
Q_G
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-s)
T_j = 25 °C
V_CC = 600 V
I_C = 25 A
R_{G on} = 39 Ω
R_{G off} = 39 Ω
di/dt_on = 250 A/µs
di/dt_off = 400 A/µs
du/dt = 3600 V/µs
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
V_GE = +15/-15 V
L_s = 22 nH
T_j = 150 °C
per IGBT, λ_paste=0.8 W/(mK)
R_th(j-s)
per IGBT, λ_paste=2.5 W/(mK)
IGBT 7 - 12
V_CE(sat)
I_C = 35 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_CE0
chiplevel
T_j = 25 °C
T_j = 150 °C
r_CE
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_GE(th)
I_CES
V_GE = V_CE V, I_C = 1 mA
V_GE = 0 V
V_CE = 1200 V
T_j = 25 °C
C_ies
C_oes
C_res
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Q_G
V_GE = - 8 V...+ 15 V
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-s)
T_j = 25 °C
V_CC = 600 V
I_C = 35 A
R_{G on} = 16 Ω
R_{G off} = 16 Ω
di/dt_on = 680 A/µs
di/dt_off = 560 A/µs
du/dt = 4000 V/µs
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
V_GE = +15/-15 V
L_s = 22 nH
T_j = 150 °C
per IGBT, λ_paste=0.8 W/(mK)
R_th(j-s)
per IGBT, λ_paste=2.5 W/(mK)
ACC
2
Rev. 4.0 – 20.11.2015
min.
typ.
max. Unit
1.85
2.10
V
2.25
2.45
V
0.80
0.90
V
0.70
0.80
V
42
48
mΩ
62
66
mΩ
5
5.8
6.5
V
0.1
0.3
mA
mA
1.43
nF
0.12
nF
0.09
nF
142
nC
0.0
Ω
96
ns
80
ns
4.2
mJ
400
ns
51
ns
2.6
mJ
1
K/W
0.84
K/W
1.85
2.10
V
2.25
2.45
V
0.80
0.90
V
0.70
0.80
V
30
34
mΩ
44
47
mΩ
5
5.8
6.5
V
0.1
0.3
mA
-
mA
1.95
nF
0.16
nF
0.12
nF
200
nC
0
Ω
52
ns
34
ns
3.9
mJ
337
ns
53
ns
3.5
mJ
0.85
K/W
0.7
K/W
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