03GB12E4IP Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX603GB12E4Ip
SEMiX^® 3p shunt
Trench IGBT Modules
SEMiX603GB12E4Ip
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Thermally optimized ceramic
• Current sensing shunt resistor
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Renewable energy systems
Remarks
• Product reliability results are valid for
T_j=150°C
• V_isol between temperature sensor and
power section is only 2500V
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 600 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 150 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
T_j = 25 °C
T_j = 150 °C
I_F = 600 A
T_j = 150 °C
di/dt_off = 6500 A/µs
V_GE = -15 V
V_CC = 600 V
T_j = 150 °C
T_j = 150 °C
per diode
R_th(c-s)
per diode (λ_grease=0.81 W/(m*K))
R_th(c-s)
per diode, pre-applied phase change
material
Module
L_CE
R_CC'+EE'
Rth_(c-s)1
Rth_(c-s)2
Rth_(c-s)2
M_s
M_t
res. terminal-chip, ^TC ^{= 25 °C}
shunt excluded _{TC = 125 °C}
calculated without thermal coupling
including thermal coupling,
Ts underneath module (λ_grease=0.81 W/
(m*K))
including thermal coupling,
Ts underneath module, pre-applied
phase change material
to heat sink (M5)
to terminals (M6)
min.
1.1
0.7
3
3
typ.
2.08
2.08
1.39
1.08
1.2
1.7
465
108
40
0.039
0.031
20
1.2
1.65
0.009
0.015
0.011
max.
2.44
2.34
1.59
1.18
1.4
1.9
0.065
6
6
w
Temperature Sensor
R₁₀₀
T_c=100°C (R₂₅=5 kΩ)
B_100/125
R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)]; T[K];
350
493 ± 5%
3550
±2%
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
K/W
K/W
nH
mΩ
mΩ
K/W
K/W
K/W
Nm
Nm
Nm
g
Ω
K
Characteristics
Symbol Conditions
Shunt
I_Shunt
R_Shunt
α
T_c = 100 °C, T_Shunt,max = 170 °C,
R_th = 2.3 K/W
Tolerance = ±5 %
min.
typ.
max. Unit
407
A
0.19
mΩ
75 ppm/K
GB + shunt
2
Rev. 4.0 – 27.05.2015
© by SEMIKRON