SKT10-3_1 Datasheet, PDF (1/2 Pages) Semikron International – THYRISTOR

SKT 10,3 Qu ZG bond.
THYRISTOR
I_T(DC) = 125 A
V_RRM = 1600 V
Size: 10,3 mm x 10,3 mm
Central gate
SKT 10,3 Qu ZG bond.
Features
• high current density due to double
mesa technology
• high surge current
• compatible to thick wire bonding
• compatible to all standard solder
processes
Typical Applications*
• conrolled rectifier circuits
• solid state relays
Absolute Maximum Ratings
Symbol Conditions
V_RRM
V_DRM
I_T(AV)
I_TSM
i²t
T_jmax
T_j = 25 °C, I_R = 0.2 mA
T_j = 25 °C, I_D = 0.2 mA
T_c = 80 °C, T_j = 130 °C
T_j = 130 °C, 10 ms, sin 180°
T_j = 130 °C, 10 ms, sin 180°
Electrical Characteristics
Symbol Conditions
V_T
V_T(TO)
r_T
I_GT
V_GT
I_GD
V_GD
I_H
I_L
T_j = 130 °C, I_T = 105 A
T_j = 130 °C
T_j = 130 °C
T_j = 25 °C
T_j = 25 °C
T_j = 115 °C
T_j = 130 °C
T_j = 25 °C
T_j = 25 °C
Dynamic Characteristics
Symbol Conditions
t_q
(di/dt)_cr
(dv/dt)_cr
T_j = 130 °C
T_j = 130 °C
T_j = 130 °C
Thermal Characteristics
Symbol Conditions
T_j
T_stg
T_solder
R_th(j-c)
Semipack 1 assembly
Mechanical Characteristics
Symbol Conditions
Raster
size
Area total
Anode
Gate and
Cathode
Wire bond
Package
Chips /
Package
SKT
© by SEMIKRON
Rev. 1 – 19.02.2010
Values
1600
1600
95
1250
7810
130
Unit
V
V
A
A
A²s
°C
min.
typ.
max. Unit
1.2
V
0.85
V
3.4
mΩ
100
mA
1.98
V
6
mA
0.25
V
220
mA
550
mA
min.
typ.
max. Unit
150
µs
100 A/µs
1000 V/µs
min.
typ.
max. Unit
-40
130
°C
-40
130
°C
255
°C
0.31
K/W
Values
10.3 x 10.3
106.1
solderable (Ag/Ni)
bondable (Al)
Al,diameter ≤ 500µm
tray
49
Unit
mm²
mm²
pcs
1