SKR8 Datasheet, PDF (1/2 Pages) Semikron International – DIODE

SKR 8,9 Qu bond
DIODE
I_F(DC) = 140 A
V_RRM = 1600 V
Size: 8,9 mm x 8,9 mm
SKR 8,9 Qu bond
Features
• high current density due to mesa
technology
• high surge current
• compatible to thick wire bonding
• compatible to all standard solder
processes
Typical Applications
• uncontrolled rectifier bridges
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
V_RRM
I_F(AV)
I²t
I_FSM
T_jmax
T_j = 25 °C, I_R = 0.05 mA
T_s = 80 °C, T_j = 150 °C
T_j = 150 °C, 10 ms, sin 180°
10 ms
T_j = 25 °C
sin 180°
T_j = 150 °C
Electrical Characteristics
Symbol Conditions
1600
V
110
A
9522
A²s
1600
A
1380
A
150
°C
min.
typ.
max. Unit
I_R
V_F
V_(TO)
r_T
t_rr
T_j = 25 °C, V_RRM
T_j = 145 °C, V_RRM
T_j = 25 °C, I_F = 77 A
T_j = 125 °C, I_F = 77 A
T_j = 125 °C
T_j = 125 °C
T_j = 25 °C, ± 1 A
Thermal Characteristics
Symbol Conditions
0.05 mA
1.1
mA
1
1.21
V
0.9
1.1
V
0.83
V
2.2
mΩ
26
µs
min.
typ.
max. Unit
T_j
T_stg
T_solder
T_solder
R_th(j-s)
-40
-40
10 min.
5 min.
soldered on 0,38 mm DCB, reference
point on copper heatsink close to the
chip
0.45
150
°C
150
°C
250
°C
320
°C
K/W
Mechanical Characteristics
Symbol Conditions
Values
Unit
Raster
size
Area total
Anode
Cathode
Wire bond
Package
Chips /
Package
8,9 x 8,9
79,21
bondable (Al)
solderable (Ag/Ni)
Al, diameter ≤ 500 µm
wafer frame
181
mm
mm²
pcs
SKR
© by SEMIKRON
Rev. 0 – 22.09.2009
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