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SKM600GA12T4_0906 Datasheet, PDF (1/5 Pages) Semikron International – Fast IGBT4 Modules | |||
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SKM600GA12T4
SEMITRANS®4
Fast IGBT4 Modules
SKM600GA12T4
Features
⢠VCE(sat) with positive temperature
coefficient
⢠High short circuit capability, self
limiting to 6 x Icnom
⢠Fast & soft inverse CAL diodes
⢠Large clearance (10 mm) and
creepage distances (20 mm)
⢠Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
Typical Applications
⢠AC inverter drives
⢠UPS
⢠Electronic welders at fsw up to 20 kHz
Remarks
⢠Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 800 V
VGE ⤠15 V
VCES ⤠1200 V
Tj = 150 °C
Inverse diode
IF
IFnom
IFRM
IFSM
Tj
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 600 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 24 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 600 A
Tj = 150 °C
VGE = ±15 V
RG on = 2 â¦
RG off = 2 â¦
Tj = 150 °C
Tj = 150 °C
di/dton = 6000 A/µs Tj = 150 °C
di/dtoff = 5200 A/µs Tj = 150 °C
per IGBT
Values
1200
916
704
600
1800
-20 ... 20
10
-40 ... 175
707
529
600
1800
3240
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.8
2.05
V
2.2
2.4
V
0.8
0.9
V
0.7
0.8
V
1.7
1.9
mâ¦
2.5
2.7
mâ¦
5
5.8
6.5
V
0.1
0.3
mA
mA
37.2
nF
2.32
nF
2.04
nF
3400
nC
1.3
â¦
177
ns
90
ns
74
mJ
600
ns
100
ns
63
mJ
0.049 K/W
GA
© by SEMIKRON
Rev. 2 â 16.06.2009
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