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SKM400GB12T4_13 Datasheet, PDF (1/5 Pages) Semikron International – Fast IGBT4 Modules | |||
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SKM400GB12T4
SEMITRANS® 3
Fast IGBT4 Modules
SKM400GB12T4
Features
⢠IGBT4 = 4. generation fast trench IGBT
(Infineon)
⢠CAL4 = Soft switching 4. generation
CAL-diode
⢠Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
⢠Increased power cycling capability
⢠With integrated gate resistor
⢠For higher switching frequenzies up to
20kHz
⢠UL recognized, file no. E63532
Typical Applications*
⢠AC inverter drives
⢠UPS
⢠Electronic welders at fsw up to 20 kHz
Remarks
⢠Case temperature limited
to Tc = 125°C max.
⢠Recommended Top = -40 ... +150°C
⢠Product reliability results valid
for Tj = 150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES
tpsc
Tj
VCC = 800 V
VGE ⤠15 V
VCES ⤠1200 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Tterminal = 80 °C
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
IC = 400 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 15.2 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 400 A
VGE = ±15 V
RG on = 1 ï
RG off = 1 ï
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 9700 A/µs Tj = 150 °C
di/dtoff = 4300 A/µs Tj = 150 °C
Rth(j-c)
per IGBT
Values
1200
616
474
400
1200
-20 ... 20
10
-40 ... 175
440
329
400
1200
1980
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.80
2.05
V
2.20
2.40
V
0.8
0.9
V
0.7
0.8
V
2.50
2.88 mï
3.75
4.00 mï
5
5.8
6.5
V
5
mA
mA
24.6
nF
1.62
nF
1.38
nF
2260
nC
1.9
ï
220
ns
47
ns
33
mJ
505
ns
78
ns
42
mJ
0.072 K/W
GB
© by SEMIKRON
Rev. 3 â 03.09.2013
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