SKM400GB12E4_10 Datasheet, PDF (1/5 Pages) Semikron International – IGBT4 Modules

SKM400GB12E4
SEMITRANS^® 3
IGBT4 Modules
SKM400GB12E4
Features
• IGBT4 = 4. Generation (Trench)IGBT
• V_CEsat with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x I_CNOM
• Soft switching 4. Generation CAL diode
(CAL4)
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders at f_sw up to 20 kHz
Remarks
• Case temperature limited to
T_c = 125°C max, recomm.
T_op = -40 ... +150°C, product
rel. results valid for T_j = 150°
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 25 °C
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
V_GES
t_psc
T_j
I_CRM = 3xI_Cnom
V_CC = 800 V
V_GE ≤ 15 V
V_CES ≤ 1200 V
T_j = 150 °C
Inverse diode
I_F
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FRM = 3xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Module
I_t(RMS)
80 °C
T_stg
V_isol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
I_C = 400 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_GE = 15 V
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
V_GE=V_CE, I_C = 15.2 mA
V_GE = 0 V
V_CE = 1200 V
T_j = 25 °C
T_j = 150 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
V_CC = 600 V
T_j = 150 °C
I_C = 400 A
V_GE = ±15 V
R_{G on} = 1 
R_{G off} = 1 
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
di/dt_on = 9700 A/µs T_j = 150 °C
di/dt_off = 4300 A/µs _{Tj = 150 °C}
R_th(j-c)
per IGBT
Values
1200
616
474
400
1200
-20 ... 20
10
-40 ... 175
440
329
400
1200
1980
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.80
2.20
0.8
0.7
2.50
3.75
5.8
0.1
24.6
1.62
1.38
2260
1.9
242
47
33
580
101
56
max. Unit
2.05
V
2.40
V
0.9
V
0.8
V
2.88 m
4.00 m
6.5
V
0.3
mA
mA
nF
nF
nF
nC

ns
ns
mJ
ns
ns
mJ
0.072 K/W
GB
© by SEMIKRON
Rev. 3 – 29.10.2010
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