SKM300GB12E4_13 Datasheet, PDF (1/5 Pages) Semikron International – IGBT4 Modules

SKM300GB12E4
SEMITRANS^® 3
IGBT4 Modules
SKM300GB12E4
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to
12kHz
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
Remarks
• Case temperature limited
to T_c = 125°C max.
• Recommended T_op = -40 ... +150°C
• Product reliability results valid
for T_j = 150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 25 °C
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
I_CRM = 3xI_Cnom
V_GES
t_psc
T_j
V_CC = 800 V
V_GE ≤ 15 V
V_CES ≤ 1200 V
T_j = 150 °C
Inverse diode
I_F
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FRM = 3xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Module
I_t(RMS)
T_stg
T_terminal = 80 °C
V_isol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
I_C = 300 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
chiplevel
T_j = 25 °C
T_j = 150 °C
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_GE=V_CE, I_C = 12 mA
V_GE = 0 V
V_CE = 1200 V
T_j = 25 °C
T_j = 150 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
V_CC = 600 V
I_C = 300 A
V_GE = ±15 V
R_{G on} = 1.5 
R_{G off} = 1.5 
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
di/dt_on = 6100 A/µs T_j = 150 °C
di/dt_off = 3000 A/µs _{Tj = 150 °C}
R_th(j-c)
per IGBT
Values
1200
422
324
300
900
-20 ... 20
10
-40 ... 175
353
264
300
900
1548
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.85
2.10
V
2.25
2.45
V
0.8
0.9
V
0.7
0.8
V
3.50
4.00 m
5.17
5.50 m
5
5.8
6.5
V
4.0
mA
mA
17.6
nF
1.16
nF
0.94
nF
1700
nC
2.5

220
ns
44
ns
27
mJ
520
ns
117
ns
39
mJ
0.11 K/W
GB
© by SEMIKRON
Rev. 3 – 21.08.2013
1