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| SKM150GAL12T4 Datasheet, PDF (1/5 Pages) Semikron International – Fast IGBT4 Modules | |||
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SKM150GAL12T4
SEMITRANS®2
Fast IGBT4 Modules
SKM150GAL12T4
Features
⢠IGBT4 = 4. Generation (Trench)IGBT
⢠VCEsat with positive temperature
coefficient
⢠High short circuit capability, self
limiting to 6 x ICNOM
⢠Soft switching 4. Generation CAL
diode (CAL4)
Typical Applications
⢠DC/DC â converter
⢠Brake chopper
⢠Switched reluctance motor
⢠DC â Motor
Remarks
⢠Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 800 V
VGE ⤠15 V
VCES ⤠1200 V
Tj = 150 °C
Inverse diode
IF
IFnom
IFRM
IFSM
Tj
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Freewheeling diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFSM
Tj
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 150 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 6 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
1200
232
179
150
450
-20 ... 20
10
-40 ... 175
189
141
150
450
900
-40 ... 175
189
141
150
450
900
-40 ... 175
200
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.8
2.05
V
2.2
2.4
V
0.8
0.9
V
0.7
0.8
V
6.7
7.7
mâ¦
10.0
10.7 mâ¦
5
5.8
6.5
V
0.1
0.3
mA
mA
9.3
nF
0.58
nF
0.51
nF
850
nC
5.0
â¦
GAL
© by SEMIKRON
Rev. 0 â 19.02.2009
1
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