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SKIM459GD12E4_11 Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules
SKiM459GD12E4
SKiM® 93
Trench IGBT Modules
SKiM459GD12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts and electrical
contacts
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-s)
IC = 450 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 18 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 450 A
Tj = 150 °C
Tj = 150 °C
RG on = 1.3 
Tj = 150 °C
RG off = 1.3 
Tj = 150 °C
di/dton = 8340 A/µs
di/dtoff = 3660 A/µs
Tj = 150 °C
Tj = 150 °C
per IGBT
Values
1200
554
450
450
1350
-20 ... 20
10
-40 ... 175
438
347
450
1350
2430
-40 ... 175
700
-40 ... 125
2500
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.85
2.25
0.8
0.7
2.3
3.4
5.8
0.1
26.40
1.74
1.41
2550
1.7
276
55
22
538
114
57
max. Unit
2.10
V
2.45
V
0.9
V
0.8
V
2.7
m
3.7
m
6.5
V
0.3
mA
mA
nF
nF
nF
nC

ns
ns
mJ
ns
ns
mJ
0.092 K/W
GD
© by SEMIKRON
Rev. 3 – 14.07.2011
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