SKIM429GD17E4HD_11 Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules

SKiM429GD17E4HD
SKiM^® 93
Trench IGBT Modules
SKiM429GD17E4HD
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• Low inductance case
• Isolated by AL₂O₃ DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts and electrical
contacts
• High short circuit capability, self limiting
to 6 x I_C
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 175 °C
T_s = 25 °C
T_s = 70 °C
I_Cnom
I_CRM
V_GES
t_psc
T_j
I_CRM = 3xI_Cnom
V_CC = 1200 V
V_GE ≤ 15 V
V_CES ≤ 1700 V
T_j = 150 °C
Inverse diode
I_F
T_j = 150 °C
T_s = 25 °C
T_s = 70 °C
I_Fnom
I_FRM
I_FRM = 2xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Module
I_t(RMS)
T_terminal = 80 °C
T_stg
V_isol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-s)
I_C = 420 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 125 °C
V_GE = 15 V
T_j = 25 °C
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
V_GE=V_CE, I_C = 16.8 mA
V_GE = 0 V
V_CE = 1700 V
T_j = 25 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
V_CC = 1200 V
I_C = 420 A
T_j = 125 °C
T_j = 125 °C
R_{G on} = 3.6 
T_j = 125 °C
R_{G off} = 3.6 
T_j = 125 °C
di/dt_on = 5200 A/µs
di/dt_off = 2200 A/µs
T_j = 125 °C
T_j = 125 °C
per IGBT
Values
1700
595
479
420
1260
-20 ... 20
10
-40 ... 175
413
298
420
840
3699
-40 ... 150
700
-40 ... 125
3300
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5.2
typ.
1.90
2.1
1.1
1
1.9
2.6
5.8
0.15
33.00
1.38
1.08
6660
2.7
390
80
245
1005
170
180
max. Unit
2.25
V
2.3
V
1.2
V
1.1
V
2.5
m
2.9
m
6.4
V
0.45
mA
mA
nF
nF
nF
nC

ns
ns
mJ
ns
ns
mJ
0.079 K/W
GD
© by SEMIKRON
Rev. 6 – 14.07.2011
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