SKIM306GD12E4 Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules

SKiM306GD12E4
SKiM^® 63
Trench IGBT Modules
SKiM306GD12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• V_CE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al₂O₃ DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology
forthermal contacts and
electricalcontacts
• High short circuit capability, self
limiting to 6 x I_C
• Integrated temperature sensor
Typical Applications
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 175 °C
T_s = 25 °C
T_s = 70 °C
I_Cnom
I_CRM
V_GES
t_psc
T_j
I_CRM = 3xI_Cnom
V_CC = 800 V
V_GE ≤ 15 V
V_CES ≤ 1200 V
T_j = 150 °C
Inverse diode
I_F
I_Fnom
I_FRM
I_FSM
T_j
T_j = 175 °C
T_s = 25 °C
T_s = 70 °C
I_FRM = 3xI_Fnom
t_p = 10 ms, sin 180°, T_j = 25 °C
Module
I_t(RMS)
T_stg
V_isol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-s)
I_C = 300 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
V_GE = 15 V
T_j = 25 °C
T_j = 150 °C
V_GE=V_CE, I_C = 12 mA
V_GE = 0 V
V_CE = 1200 V
T_j = 25 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
V_CC = 600 V
I_C = 300 A
T_j = 150 °C
T_j = 150 °C
R_{G on} = 1 Ω
T_j = 150 °C
R_{G off} = 1 Ω
T_j = 150 °C
di/dt_on = 6590 A/µs
di/dt_off = 4000 A/µs
T_j = 150 °C
T_j = 150 °C
per IGBT
Values
1200
365
296
300
900
-20 ... 20
10
-40 ... 175
285
225
300
900
1620
-40 ... 175
700
-40 ... 125
2500
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.85
2.10
V
2.25
2.45
V
0.8
0.9
V
0.7
0.8
V
3.5
4.0
mΩ
5.2
5.5
mΩ
5
5.8
6.5
V
0.1
0.3
mA
mA
17.6
nF
1.16
nF
0.94
nF
1700
nC
2.5
Ω
252
ns
44
ns
19
mJ
506
ns
70
ns
39
mJ
0.142 K/W
GD
© by SEMIKRON
Rev. 2 – 26.08.2009
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