SKCD81C120I4F Datasheet, PDF (1/2 Pages) Semikron International – CAL-DIODE

SKCD 81 C 120 I4F
CAL-DIODE
I_F = 150 A
V_RRM = 1200 V
Size: 9 mm x 9 mm
SKCD 81 C 120 I4F
Features
• max. junction 175 °C
• very low forward voltage drop
• positive temperature coefficient
• extreme soft recovery
Typical Applications*
• freewheeling diode for IGBT
Absolute Maximum Ratings
Symbol Conditions
V_RRM
I_F(AV)
I_FSM
T_jmax
T_j = 25 °C, I_R = 0.18 mA
T_c = 80 °C, T_j = 175 °C, F_i=PI/2
10 ms
T_j = 25 °C
sin 180°
T_j = 150 °C
Electrical Characteristics
Symbol Conditions
i²t
I_R
V_F
V_(TO)
r_T
V_(TO)
r_T
T_j = 150 °C, sin 180°, 10 ms
T_j = 25 °C, V_RRM = 1200 V
T_j = 150 °C, V_RRM = 1200 V
T_j = 25 °C, I_F = 150 A
T_j = 150 °C, I_F = 150 A
T_j = 175 °C, I_F = 150 A
T_j = 150 °C
T_j = 150 °C
T_j = 175 °C
T_j = 175 °C
Dynamic Characteristics
Symbol Conditions
t_rr
T_j = 150 °C, 150 A, 600 V, 3200 A/µs
E_rr
T_j = 150 °C, 150 A, 600 V, 3200 A/µs
I_rrm
T_j = 150 °C, 150 A, 600 V, 3200 A/µs
Thermal Characteristics
Symbol Conditions
T_j
T_stg
T_solder
T_solder
R_th(j-c)
10 min.
5 min.
Semitrans Assembly
Mechanical Characteristics
Symbol Conditions
Raster
size
Area total
Anode Metallization
Cathode Metallization
Wire bond
Package
Chips /
Package
Values
1200
98
900
900
175
Unit
V
A
A
A
°C
min.
typ.
14.00
2.14
2.07
1.93
0.90
7.8
0.82
7.40
max. Unit
4050 A²s
0.18
mA
28.00 mA
2.46
V
2.38
V
2.24
V
1.10
V
8.60 m
0.98
V
8.40 m
min.
typ.
max. Unit
0.48
µs
8.7
mJ
153
A
min.
typ.
max. Unit
-40
175
°C
-40
175
°C
250
°C
320
°C
0.32
K/W
Values
Unit
9x9
81
bondable (Al)
solderable (Ag/Ni)
Al, typ. diameter = 300 µm
wafer frame
179
mm²
mm²
pcs
SKCD
© by SEMIKRON
Rev. 0 – 16.03.2011
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