SKCD47C170I_10 Datasheet, PDF (1/2 Pages) Semikron International – CAL-DIODE

SKCD 47 C 170 I
CAL-DIODE
I_F = 55 A
V_RRM = 1700 V
Size: 6,8 mm x 6,8 mm
SKCD 47 C 170 I
Features
• low forward voltage drop combined
with a low temperature dependence
• easy paralleling due to a small forward
voltage spread
• very soft recovery behavior
• small switching losses
• high ruggedness
• compatible to thick wire bonding
• compatible to all standard solder
processes
Typical Applications*
• freewheeling diode for IGBT
• particularly suitable for frequencies > 8
kHz
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
V_RRM
I_F(AV)
I_FSM
T_jmax
T_j = 25 °C, I_R = 0.2 mA
T_s = 80 °C, T_j = 150 °C
10 ms
T_j = 25 °C
sin 180°
T_j = 150 °C
Electrical Characteristics
Symbol Conditions
1700
V
40
A
720
A
550
A
150
°C
min.
typ.
max. Unit
i²t
I_R
V_F
V_(TO)
r_T
T_j = 150 °C, 10 ms, sin 180°
T_j = 25 °C, V_RRM = 1700 V
T_j = 125 °C, V_RRM = 1700 V
T_j = 25 °C, I_F = 55 A
T_j = 125 °C, I_F = 55 A
T_j = 125 °C
T_j = 125 °C
Dynamic Characteristics
Symbol Conditions
1500 A²s
0.20 mA
8.00 mA
2.05
2.50
V
1.80
2.30
V
1.11
V
1.2
mΩ
min.
typ.
max. Unit
t_rr
T_j = 25 °C, 50 A, 1200 V, 800 A/µs
t_rr
T_j = 125 °C, 50 A, 1200 V, 800 A/µs
Q_rr
T_j = 25 °C, 50 A, 1200 V, 800 A/µs
Q_rr
T_j = 125 °C, 50 A, 1200 V, 800 A/µs
I_rrm
T_j = 25 °C, 50 A, 1200 V, 800 A/µs
I_rrm
T_j = 125 °C, 50 A, 1200 V, 800 A/µs
Thermal Characteristics
Symbol Conditions
min.
µs
ns
6
µC
15
µC
A
45
A
typ. max. Unit
T_j
-40
150
°C
T_stg
-40
150
°C
T_solder
10 min.
250
°C
T_solder
5 min.
320
°C
R_th(j-s)
sold. on 0,38 mm DCB, reference point
on copper heatsink close to the chip
0.7
K/W
Mechanical Characteristics
Symbol Conditions
Values
Unit
Raster
size
Area total
Anode
Cathode
Wire bond
Package
Chips /
Package
6.8 x 6.8
47
bondable (Al)
solderable (Ag/Ni)
Al, diameter ≤ 500 µm
wafer frame
208 (5" Wafer)
mm²
mm²
pcs
SKCD
© by SEMIKRON
Rev. 1 – 18.02.2010
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