SKCD23C120I3_10 Datasheet, PDF (1/2 Pages) Semikron International – CAL-DIODE

SKCD 23 C 120 I3
CAL-DIODE
I_F = 30 A
V_RRM = 1200 V
Size: 6,56 mm x 3,53 mm
SKCD 23 C 120 I3
Features
• low forward voltage drop combined
with a low temperature dependence
• easy paralleling due to a small forward
voltage spread
• very soft recovery behavior
• small switching losses
• high ruggedness
• compatible to thick wire bonding
• compatible to all standard solder
processes
Typical Applications*
• freewheeling diode for IGBT
• particularly suitable for frequencies > 8
kHz
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
V_RRM
I_F(AV)
I_FSM
T_jmax
T_j = 25 °C, I_R = 0.1 mA
T_s = 80 °C, T_j = 150 °C
10 ms
T_j = 25 °C
sin 180°
T_j = 150 °C
Electrical Characteristics
Symbol Conditions
1200
V
20
A
A
250
A
150
°C
min.
typ.
max. Unit
i²t
I_R
V_F
V_(TO)
r_T
T_j = 150 °C, 10 ms, sin 180°
T_j = 25 °C, V_RRM = 1200 V
T_j = 125 °C, V_RRM = 1200 V
T_j = 25 °C, I_F = 25 A
T_j = 125 °C, I_F = 25 A
T_j = 125 °C
T_j = 125 °C
Dynamic Characteristics
Symbol Conditions
313
A²s
0.10 mA
4.00 mA
2.00
2.50
V
1.79
2.30
V
1.18
V
25.2
mΩ
min.
typ.
max. Unit
t_rr
T_j = 25 °C, 25 A, 600 V, 500 A/µs
t_rr
T_j = 125 °C, 25 A, 600 V, 500 A/µs
Q_rr
T_j = 25 °C, 25 A, 600 V, 500 A/µs
Q_rr
T_j = 125 °C, 25 A, 600 V, 500 A/µs
I_rrm
T_j = 25 °C, 25 A, 600 V, 500 A/µs
I_rrm
T_j = 125 °C, 25 A, 600 V, 500 A/µs
Thermal Characteristics
Symbol Conditions
µs
ns
1.8
µC
3.7
µC
A
20
A
min.
typ.
max. Unit
T_j
T_stg
T_solder
T_solder
R_th(j-s)
-40
-40
10 min.
5 min.
sold. on 0,38 mm DCB, reference point
on copper heatsink close to the chip
1.25
150
°C
150
°C
250
°C
320
°C
K/W
Mechanical Characteristics
Symbol Conditions
Values
Unit
Raster
size
Area total
Anode
Cathode
Wire bond
Package
Chips /
Package
6.56 x 3.53
23.16
bondable (Al)
solderable (Ag/Ni)
Al, diameter ≤ 500 µm
wafer frame
423 (5" Wafer)
mm²
mm²
pcs
SKCD
© by SEMIKRON
Rev. 0 – 18.02.2010
1