SKCD18C120IHD_10 Datasheet, PDF (1/2 Pages) Semikron International – CAL-DIODE

SKCD 18 C 120 I HD
CAL-DIODE
I_F = 25 A
V_RRM = 1200 V
Size: 4,2 mm x 4,2 mm
SKCD 18 C 120 I HD
Features
• high current density
• easy paralleling due to a small forward
voltage spread
• positive temperature coefficient
• very soft recovery behavior
• small switching losses
• high ruggedness
• compatible to thick wire bonding
• compatible to standard solder
processes
Typical Applications*
• freewheeling diode for IGBT
• particularly suitable for frequencies < 8
kHz
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
V_RRM
I_F(AV)
I_FSM
T_jmax
T_j = 25 °C, I_R = 0.1 mA
T_s = 80 °C, T_j = 150 °C
10 ms
T_j = 25 °C
sin 180°
T_j = 150 °C
Electrical Characteristics
Symbol Conditions
1200
V
20
A
270
A
200
A
150
°C
min.
typ.
max. Unit
i²t
I_R
V_F
V_(TO)
r_T
T_j = 150 °C, 10 ms, sin 180°
T_j = 25 °C, V_RRM = 1200 V
T_j = 125 °C, V_RRM = 1200 V
T_j = 25 °C, I_F = 20 A
T_j = 125 °C, I_F = 20 A
T_j = 125 °C
T_j = 125 °C
Dynamic Characteristics
Symbol Conditions
200
A²s
0.10 mA
2.00 mA
1.50
1.77
V
1.50
1.77
V
0.92
V
27.7
mΩ
min.
typ.
max. Unit
t_rr
T_j = 25 °C, 20 A, 600 V, 300 A/µs
t_rr
T_j = 125 °C, 20 A, 600 V, 300 A/µs
Q_rr
T_j = 25 °C, 20 A, 600 V, 300 A/µs
Q_rr
T_j = 125 °C, 20 A, 600 V, 300 A/µs
I_rrm
T_j = 25 °C, 20 A, 600 V, 300 A/µs
I_rrm
T_j = 125 °C, 20 A, 600 V, 300 A/µs
Thermal Characteristics
Symbol Conditions
µs
ns
µC
5
µC
A
16
A
min.
typ.
max. Unit
T_j
T_stg
T_solder
T_solder
R_th(j-s)
-40
-40
10 min.
5 min.
sold. on 0,38 mm DCB, reference point
on copper heatsink close to the chip
1.47
150
°C
150
°C
250
°C
320
°C
K/W
Mechanical Characteristics
Symbol Conditions
Values
Unit
Raster
size
Area total
Anode
Cathode
Wire bond
Package
Chips /
Package
4.2 x 4.2
17.64
bondable (Al)
solderable (Ag/Ni)
Al, diameter ≤ 500 µm
wafer frame
578 (5" Wafer)
mm²
mm²
pcs
SKCD
© by SEMIKRON
Rev. 0 – 18.02.2010
1