SKCD121C060I3_10 Datasheet, PDF (1/2 Pages) Semikron International – CAL-DIODE

SKCD 121 C 060 I3
CAL-DIODE
I_F = 210 A
V_RRM = 600 V
Size: 11 mm x 11 mm
SKCD 121 C 060 I3
Features
• low forward voltage drop combined
with a low temperature dependence
• easy paralleling due to a small forward
voltage spread
• very soft recovery behavior
• small switching losses
• high ruggedness
• compatible to thick wire bonding
• compatible to all standard solder
processes
Typical Applications*
• freewheeling diode for IGBT
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
V_RRM
I_F(AV)
I_FSM
T_jmax
T_j = 25 °C, I_R = 0.5 mA
T_s = 80 °C, T_j = 150 °C
10 ms
T_j = 25 °C
sin 180°
T_j = 150 °C
Electrical Characteristics
Symbol Conditions
600
V
160
A
A
2100
A
150
°C
min.
typ.
max. Unit
i²t
I_R
V_F
V_(TO)
r_T
T_j = 150 °C, 10 ms, sin 180°
T_j = 25 °C, V_RRM = 600 V
T_j = 125 °C, V_RRM = 600 V
T_j = 25 °C, I_F = 245 A
T_j = 125 °C, I_F = 245 A
T_j = 125 °C
T_j = 125 °C
Dynamic Characteristics
Symbol Conditions
22050 A²s
0.50 mA
10.00 mA
1.35
1.60
V
1.35
1.60
V
0.90
V
1.8
mΩ
min.
typ.
max. Unit
t_rr
T_j = 25 °C, 200 A, 300 V, 1000 A/µs
µs
t_rr
T_j = 125 °C, 200 A, 300 V, 1000 A/µs
ns
Q_rr
T_j = 25 °C, 200 A, 300 V, 1000 A/µs
5
µC
Q_rr
T_j = 125 °C, 200 A, 300 V, 1000 A/µs
10.7
µC
I_rrm
T_j = 25 °C, 200 A, 300 V, 1000 A/µs
A
I_rrm
T_j = 125 °C, 200 A, 300 V, 1000 A/µs
75
A
Thermal Characteristics
Symbol Conditions
min.
typ.
max. Unit
T_j
T_stg
T_solder
T_solder
R_th(j-s)
-40
-40
10 min.
5 min.
sold. on 0,38 mm DCB, reference point
on copper heatsink close to the chip
0.24
150
°C
150
°C
250
°C
320
°C
K/W
Mechanical Characteristics
Symbol Conditions
Values
Unit
Raster
size
Area total
Anode
Cathode
Wire bond
Package
Chips /
Package
11 x 11
121
bondable (Al)
solderable (Ag/Ni)
Al, diameter ≤ 500 µm
wafer frame
76 (5" Wafer)
mm²
mm²
pcs
SKCD
© by SEMIKRON
Rev. 0 – 18.02.2010
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