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| SKCD08C120I4F Datasheet, PDF (1/2 Pages) Semikron International – CAL-DIODE | |||
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SKCD 08 C 120 I4F
CAL-DIODE
IF = 8 A
VRRM = 1200 V
Size: 2,85 mm x 2,85 mm
SKCD 08 C 120 I4F
Features
⢠max. junction 175 °C
⢠very low forward voltage drop
⢠positive temperature coefficient
⢠extreme soft recovery
Typical Applications*
⢠freewheeling diode for IGBT
Absolute Maximum Ratings
Symbol Conditions
VRRM
IF(AV)
IFSM
Tjmax
Tj = 25 °C, IR = 0.06 mA
Tc = 80 °C, Tj = 175 °C, Fi=PI/2
10 ms
Tj = 25 °C
sin 180°
Tj = 150 °C
Electrical Characteristics
Symbol Conditions
i²t
IR
VF
V(TO)
rT
V(TO)
rT
Tj = 150 °C, sin 180°, 10 ms
Tj = 25 °C, VRRM = 1200 V
Tj = 150 °C, VRRM = 1200 V
Tj = 25 °C, IF = 8 A
Tj = 150 °C, IF = 8 A
Tj = 175 °C, IF = 8 A
Tj = 150 °C
Tj = 150 °C
Tj = 175 °C
Tj = 175 °C
Dynamic Characteristics
Symbol Conditions
trr
Tj = 150 °C, 8 A, 600 V, 130 A/µs
Err
Tj = 150 °C, 8 A, 600 V, 130 A/µs
Irrm
Tj = 150 °C, 8 A, 600 V, 130 A/µs
Thermal Characteristics
Symbol Conditions
Tj
Tstg
Tsolder
Tsolder
Rth(j-c)
10 min.
5 min.
Semitrans Assembly
Mechanical Characteristics
Symbol Conditions
Raster
size
Area total
Anode Metallization
Cathode Metallization
Wire bond
Package
Chips /
Package
SKCD
© by SEMIKRON
Rev. 0 â 16.03.2011
Values
1200
6
36
36
175
Unit
V
A
A
A
°C
min.
typ.
max. Unit
6
A²s
0.06
mA
0.30
0.70
mA
2.33
2.65
V
2.35
2.68
V
2.19
2.51
V
0.90
1.10
V
181.6 197.58 mï
0.82
0.98
V
171.25 191.22 mï
min.
typ.
max. Unit
0.92
µs
0.4
mJ
2.6
A
min.
typ.
max. Unit
-40
175
°C
-40
175
°C
250
°C
320
°C
4.33
K/W
Values
Unit
2,85 x 2,85
8
bondable (Al)
solderable (Ag/Ni)
Al, typ. diameter = 300 µm
wafer frame
1894
mm2
mm²
pcs
1
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