SK75GD07E3ETE2 Datasheet, PDF (1/4 Pages) Semikron International – Press-Fit contact technology

SK75GD07E3ETE2
SEMITOP^®E2
IGBT module
Engineering Sample
SK75GD07E3ETE2
Target Data
Features
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
• 650V Trench IGBT technology
• Robust and soft freewheeling diode
CAL technology
• UL recognized file no. E 63 532
• Integrated NTC temperature sensor
Typical Applications*
• Inverter up to 41kVA
• Typical motor power 18.5kW
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
V_CES
I_C
T_j = 25 °C
T_j = 175 °C
T_s = 25 °C
T_s = 70 °C
I_Cnom
I_CRM
V_GES
t_psc
T_j
I_CRM = 3 x I_Cnom
V_CC = 360 V
V_GE ≤ 15 V
V_CES ≤ 650 V
T_j = 150 °C
Inverse - Diode
V_RRM
I_F
T_j = 25 °C
T_j = 175 °C
T_s = 25 °C
T_s = 70 °C
I_Fnom
I_FRM
I_FSM
T_j
I_FRM = 2 x I_Fnom
10 ms, sin 180°, T_j = 150 °C
Module
I_t(RMS)
T_stg
V_isol
T_terminal = 100 °C, T_S = 60°C
AC, sinusoidal, t = 1 min
Characteristics
Symbol Conditions
Inverter - IGBT
V_CE(sat)
I_C = 75 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_CE0
chiplevel
T_j = 25 °C
T_j = 150 °C
r_CE
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_GE(th)
V_GE = V_CE, I_C = 1.2 mA
I_CES
V_GE = 0 V, V_CE = 650 V, T_j = 25 °C
C_ies
C_oes
C_res
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Q_G
- 8 V...+ 15 V
R_Gint
T_j = 25 °C
t_d(on)
t_r
E_on
t_d(off)
V_CC = 300 V
I_C = 75 A
R_{G on} = 6 Ω
R_{G off} = 6 Ω
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
t_f
T_j = 150 °C
E_off
V_GE = +15/-8 V
T_j = 150 °C
R_th(j-s)
per IGBT
Values
650
66
53
75
225
-20 ... 20
6
-40 ... 175
600
70
55
75
150
395
-40 ... 175
t.b.d.
-40 ... 125
2500
Unit
V
A
A
A
A
V
µs
°C
V
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.45
1.70
0.75
0.68
9.3
14
5.8
4.62
0.288
0.137
680
0
1.1
2.55
1.1
max. Unit
1.77
V
2.15
V
0.90
V
0.83
V
12
mΩ
18
mΩ
6.5
V
-
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
GD-ET
© by SEMIKRON
Rev. 0.2 – 10.02.2017
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