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SK50GD07E3ETE1 Datasheet, PDF (1/4 Pages) Semikron International – Low inductive design, Press-Fit contact technology
SK50GD07E3ETE1
SEMITOP®E1
IGBT module
Engineering Sample
SK50GD07E3ETE1
Target Data
Features
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
• 650V Trench IGBT technology
• Robust and soft freewheeling diode
CAL technology
• UL recognized file no. E 63 532
• Integrated NTC temperature sensor
Typical Applications*
• Inverter up to 33kVA
• Typical motor power 15kW
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3 x ICnom
VCC = 360 V
VGE ≤ 15 V
VCES ≤ 650 V
Tj = 150 °C
Inverse - Diode
VRRM
IF
Tj = 25 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IFnom
IFRM
IFSM
Tj
IFRM = 2 x IFnom
10 ms, sin 180°, Tj = 150 °C
Module
It(RMS)
Tstg
Visol
Tterminal = 100 °C, TS = 60°C
AC, sinusoidal, t = 1 min
Characteristics
Symbol Conditions
Inverter - IGBT
VCE(sat)
IC = 50 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VCE0
chiplevel
Tj = 25 °C
Tj = 150 °C
rCE
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE(th)
VGE = VCE, IC = 0.8 mA
ICES
VGE = 0 V, VCE = 650 V, Tj = 25 °C
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
QG
- 8 V...+ 15 V
RGint
Tj = 25 °C
td(on)
tr
Eon
td(off)
VCC = 300 V
IC = 50 A
RG on = 6.8 Ω
RG off = 6.8 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
tf
Tj = 150 °C
Eoff
VGE = +15/-8 V
Tj = 150 °C
Rth(j-s)
per IGBT
Values
650
49
39
50
150
-20 ... 20
6
-40 ... 175
650
57
45
50
100
460
-40 ... 175
t.b.d.
-40 ... 125
2500
Unit
V
A
A
A
A
V
µs
°C
V
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.45
1.70
0.90
0.82
11
18
5.8
3.14
0.2
0.093
460
0
0.64
1.7
1.45
max. Unit
1.85
V
2.10
V
1.00
V
0.90
V
17
mΩ
24
mΩ
6.5
V
-
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
GD-ET
© by SEMIKRON
Rev. 0.3 – 06.02.2017
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