SK50DGDL066ETE2 Datasheet, PDF (1/6 Pages) Semikron International – Low inductive design

SK50DGDL066ETE2
SEMITOP^®E2
3-phase bridge rectifer +
brake chopper + 3-phase
bridge inverter
Engineering Sample
SK50DGDL066ETE2
Target Data
Features
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
• Trench3 600V IGBT technology
• CAL technology FWD
• UL recognized file no. E 63 532
• Integrated NTC temperature sensor
Typical Applications*
• Inverter up to 18kVA
• Typical motor power 7.5kW
Remarks
• IGBT1: inverter IGBT
• IGBT2: brake IGBT
• Diode1: rectifier diode section
• Diode2: APD inverter
• Diode3: FWD brake
Absolute Maximum Ratings
Symbol Conditions
IGBT 1
V_CES
I_C
I_Cnom
I_CRM
V_GES
t_psc
T_j
T_j = 25 °C
T_j = 175 °C
I_CRM = 2 x I_Cnom
V_CC = 360 V
V_GE ≤ 15 V
V_CES ≤ 600 V
T_s = 25 °C
T_s = 70 °C
T_j = 150 °C
Absolute Maximum Ratings
Symbol Conditions
IGBT 2
V_CES
I_C
I_Cnom
I_CRM
V_GES
t_psc
T_j
T_j = 25 °C
T_j = 175 °C
I_CRM = 2 x I_Cnom
V_CC = 360 V
V_GE ≤ 15 V
V_CES ≤ 600 V
T_c = 25 °C
T_c = 70 °C
T_j = 150 °C
Absolute Maximum Ratings
Symbol Conditions
Diode 1
V_RRM
I_F
I_Fnom
I_FSM
i²t
T_j
T_j = 25 °C
T_j = 150 °C
T_s = 25 °C
T_s = 70 °C
10 ms, sin 180°, T_j = 150 °C
10 ms, sin 180°, T_j = 150 °C
Absolute Maximum Ratings
Symbol Conditions
Diode 2
V_RRM
I_F
I_Fnom
I_FRM
I_FSM
T_j
T_j = 25 °C
T_j = 175 °C
T_s = 25 °C
T_s = 70 °C
I_FRM = 2 x I_Fnom
10 ms, sin 180°, T_j = 150 °C
DGDL-ET
© by SEMIKRON
Rev. 0.1 – 08.02.2017
Values
600
53
42
50
100
-20 ... 20
6
-40 ... 175
Values
600
53
42
50
100
-20 ... 20
6
-40 ... 175
Values
1600
51
38
18
350
612
-40 ... 150
Values
600
49
39
50
100
320
-40 ... 175
Unit
V
A
A
A
A
V
µs
°C
Unit
V
A
A
A
A
V
µs
°C
Unit
V
A
A
A
A
A²s
°C
Unit
V
A
A
A
A
A
°C
1