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| SK35GAR12T4 Datasheet, PDF (1/5 Pages) Semikron International – IGBT module | |||
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SK 35 GAR 12T4
SEMITOP® 2
IGBT module
SK 35 GAR 12T4
Features
⢠Compact design
⢠One screw mounting
⢠Heat transfer and isolation through
direct copper bonded aluminium oxide
ceramic (DCB)
⢠High short circuit capability
⢠Trench4 IGBT technology
⢠CAL4F diode technology
⢠VCE,sat with positive coefficient
⢠UL recognized, file no. E 63 532
Typical Applications*
⢠Inverter
⢠Motor drive
Absolute Maximum Ratings
Symbol Conditions
Chopper IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
ICnom
ICRM
ICRM = 3 x ICnom
VGES
tpsc
Tj
VCC = 800 V
VGE ⤠15 V
VCES ⤠1200 V
Tj = 150 °C
Chopper Diode
IF
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IFnom
IFRM
IFRM = 3 x IFnom
IFSM
10 ms, sin 180°, Tj = 150 °C
Tj
Freewheeling Diode
IF
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
10 ms, sin 180°, Tj = 150 °C
Tj
Module
It(RMS)
Tstg
Visol
AC, sinusoidal, t = 1 min
Characteristics
Symbol Conditions
Chopper IGBT
VCE(sat)
IC = 35 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VCE0
chiplevel
Tj = 25 °C
Tj = 150 °C
rCE
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE(th)
VGE = VCE V, IC = 1.2 mA
ICES
VGE = 0 V
Tj = 25 °C
VCE = 1200 V
Tj = 150 °C
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
QG
- 8 V...+ 15 V
RGint
Tj = 25 °C
Values
1200
43
35
35
105
-20 ... 20
10
-40 ... 175
38
30
35
105
170
-40 ... 175
38
30
35
105
170
-40 ... 175
-40 ... 125
2500
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.85
2.1
V
2.25
2.45
V
0.8
0.9
V
0.7
0.8
V
30.0
34.3 mï
44.3
47.1 mï
5
5.8
6.5
V
0.062 0.186 mA
mA
1.95
nF
0.155
nF
0.115
nF
189
nC
-
ï
GAR
© by SEMIKRON
Rev. 0 â 03.06.2013
1
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