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| SEMIX854GB176HDS_08 Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX854GB176HDs
SEMiX®4s
Trench IGBT Modules
SEMiX854GB176HDs
Preliminary Data
Features
⢠Homogeneous Si
⢠Trench = Trenchgate technology
⢠VCE(sat) with positive temperature
coefficient
⢠UL recognised file no. E63532
Typical Applications
⢠AC inverter drives
⢠UPS
⢠Electronic welders
Remarks
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 150°C
Tc = 25°C
Tc = 80°C
ICRM
VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 1000V
VGE ⤠20V
Tj = 125°C
VCES ⤠1700V
Inverse diode
IF
Tj = 150°C
Tc = 25°C
Tc = 80°C
IFRM
IFSM
Tj
IFRM = 2xIFnom
tp = 10ms, half sine wave, Tj = 25°C
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 60s
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
ICnom = 600A
VGE = 15V
chiplevel
Tj = 25°C
Tj = 125°C
Tj = 25°C
VGE = 15V
Tj = 125°C
Tj = 25°C
Tj = 125°C
VGE=VCE, IC = 24mA
VGE = 0V
VCE = 1700V
Tj = 25°C
Tj = 125°C
VCE = 25V
VGE = 0V
f = 1MHz
f = 1MHz
f = 1MHz
VGE = - 8 V...+ 15 V
Tj = 25°C
VCC = 1200V
ICnom = 600A
Tj = 125°C
RG on = 2â¦
RG off = 2â¦
per IGBT
Values
1700
779
549
1200
-20 ... 20
10
-55 ... 150
740
496
1200
3800
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
V
µs
°C
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
2
2.45
V
2.45
2.9
V
1
1.2
V
0.9
1.1
V
1.7
2.1
mâ¦
2.6
3.0
mâ¦
5.2
5.8
6.4
V
0.12
0.36 mA
mA
52.8
nF
2.20
nF
1.75
nF
5600
nC
1.25
â¦
340
ns
80
ns
395
mJ
890
ns
155
ns
235
mJ
0.045 K/W
GB
© by SEMIKRON
03.04.2008
1
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