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SEMIX653GD176HDC_10 Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX653GD176HDc
SEMiX® 33c
Trench IGBT Modules
SEMiX653GD176HDc
Features
⢠Homogeneous Si
⢠Trench = Trenchgate technology
⢠VCE(sat) with positive temperature
coefficient
⢠UL recognised file no. E63532
Typical Applications*
⢠AC inverter drives
⢠UPS
⢠Electronic welders
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 1000 V
VGE ⤠20 V
VCES ⤠1700 V
Tj = 125 °C
Inverse diode
IF
IFnom
IFRM
IFSM
Tj
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
IC = 450 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
Tj = 25 °C
Tj = 125 °C
VGE=VCE, IC = 18 mA
VGE = 0 V
VCE = 1700 V
Tj = 25 °C
Tj = 125 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 1200 V
IC = 450 A
Tj = 125 °C
Tj = 125 °C
RG on = 3.6 â¦
RG off = 3.6 â¦
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Eoff
Tj = 125 °C
Rth(j-c)
per IGBT
Values
1700
619
438
450
900
-20 ... 20
10
-55 ... 150
545
365
450
900
2900
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
2
2.45
V
2.45
2.9
V
1
1.2
V
0.9
1.1
V
2.2
2.8
mâ¦
3.4
4.0
mâ¦
5.2
5.8
6.4
V
3
mA
mA
39.6
nF
1.65
nF
1.31
nF
4200
nC
1.67
â¦
290
ns
90
ns
300
mJ
975
ns
190
ns
180
mJ
0.054 K/W
GD
© by SEMIKRON
Rev. 1 â 24.06.2010
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